The transistor is a semiconductor
device, which can amplify the electronic signals, such as radio and television
signal. It is an important ingredient of every electronic circuit.
Transistor is a three terminal
device, such as Base, Emitter, and Collector. It can be operating by three
configurations, such as common base, common emitter, and common collector.
According to the configuration mode it can be use for voltage as well as
current amplification. The concept of transfer of resistance has given by the
name of transfer resistor.
There are two types of transistors,
such as unipolar junction transistor and bipolar junction transistor. In
uni-polar transistor the current conduction is only due to one type of
carriers, as majority carriers. The current conduction in bipolar transistor is
because of both the types of charge carriers are holes and electrons. Therefore
this is called bipolar junction transistor.
The bipolar junction transistor has
two types,
1. N-p-n type
2. P-n-p type
Principle of Bias Transistor:
To operate the transistor properly
as an amplifier, it is necessary to bias correctly the two p-n junctions with
external voltages. Depending upon the external bias voltage polarity usage and
the transistor works in one three regions.
1. Active region
2. Cut-off region
3. Saturation region
Construction of a transistor:
The transistor can be constructing by use of the five basic techniques and accordingly they are classified as,
1. Grown type
2. Alloy type
3. Electro chemically etched type
4. Diffusion type
Grown Type:
This technique is used to form the two p-n junctions of a grown-junction transistor. A single crystal is drawn from a melt of silicon or germanium whose impurity concentration is change during the crystal drawing operation.
Alloy Type:
This type of construction is p-n-p transistor. Such construction is also known as fused construction. Here the center section is a thin wafer of n-type material. The collector is made larger than the emitter to withstand the heavy current and power dissipation at the collector base junction.
Electronically Etched Type:
In this technique, etching
depression is made on opposite sides of the semiconductor wafer to reduce the
thickness of the base region. The electro-chemically etching devices are also
referring to the surface-barrier transistor. However these devices are no
longer of commercial importance.
Diffusion Type:
Diffusion is a process, by which a
heavy concentration of particles will diffuse into the surrounding region of
lesser concentration. The primary difference between the diffusion and the
alloy process is the fact that liquefaction is not reach in the diffusion
process. Heat is applied to the diffusion process only to increase the activity
of the elements can be involved.